KB番号:012
概要説明:高温による回路基盤(Si基盤)のリーク電流増大
ストレス大分類:温度
ストレス小分類:高温
故障メカニズム大分類:アロイスパイク
故障メカニズム小分類:
故障フェーズⅠ:高温処理
故障フェーズⅡ:絶縁劣化
故障モード:リーク電流増大
アイテム:回路基盤(Si基盤)
故障の発生原理:
故障モードの検出:SEM?
SEM
走査型電子顕微鏡(Scanning Electron Microscope)
主な業界・分野:
抑制対策(再発防止策):
抑制対策(評価基準):
備考:
website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website website